Topotactic Phase Transition Driving Memristive Behavior

Phase-transition driven memristive system

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential a...

Voltage-Controlled Topotactic Phase Transition in Thin-Film SrCoOx Monitored by In Situ X-ray Diffraction.

Topotactic phase transition of functional oxides induced by changes in oxygen nonstoichiometry can largely alter multiple physical and chemical properties, including electrical conductivity, magnetic state, oxygen diffusivity, and electrocatalytic reactivity. For tuning these properties reversibly, feasible means to control oxygen nonstoichiometry-dependent phase transitions in functional oxide...

MEMRISTIVE BEHAVIOR OF NaOH-IMMERSED TITANIA NANOSTRUCTURES

Memristive behavior is defined as a resistive switching loop which can be observed from the current-voltage (I-V) characteristic of a material. This paper reports the application of TiO2 (titania) nanostructures as an active layer for a memristive device instead of using titania thin film in nanoscale thickness as reported by other researchers. 60 nm thickness of titania thin film was deposited...

Critical behavior in the electroweak phase transition.

We examine the behavior of the standard-model electroweak phase transition in the early Universe. We argue that close to the critical temperature it is possible to estimate the effective infrared corrections to the 1-loop potential using well known ε-expansion results from the theory of critical phenomena in 3 spatial dimensions. The theory with the ε-corrected potential exhibits much larger fl...

Phase Transition Behavior: from Decision to